GÜR, E. Et Al. 2011. Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies. APPLIED PHYSICS LETTERS , vol.99, no.9 .

GÜR, E., Zhang, Z., Krishnamoorty, S., Rajan, S., & Ringel, S. A., (2011). Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies. APPLIED PHYSICS LETTERS , vol.99, no.9.

GÜR, EMRE Et Al. "Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies," APPLIED PHYSICS LETTERS , vol.99, no.9, 2011

GÜR, EMRE Et Al. "Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies." APPLIED PHYSICS LETTERS , vol.99, no.9, 2011

GÜR, E. Et Al. (2011) . "Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies." APPLIED PHYSICS LETTERS , vol.99, no.9.

@article{article, author={EMRE GÜR Et Al. }, title={Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies}, journal={APPLIED PHYSICS LETTERS}, year=2011}