R. S. Khan Et Al. , "Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation," APPLIED PHYSICS LETTERS , vol.116, 2020
Khan, R. S. Et Al. 2020. Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation. APPLIED PHYSICS LETTERS , vol.116 .
Khan, R. S., Dirisaglik, F., Gokirmak, A., & Silva, H., (2020). Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation. APPLIED PHYSICS LETTERS , vol.116.
Khan, R. Et Al. "Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation," APPLIED PHYSICS LETTERS , vol.116, 2020
Khan, R. S. Et Al. "Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation." APPLIED PHYSICS LETTERS , vol.116, 2020
Khan, R. S. Et Al. (2020) . "Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation." APPLIED PHYSICS LETTERS , vol.116.
@article{article, author={R. S. Khan Et Al. }, title={Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation}, journal={APPLIED PHYSICS LETTERS}, year=2020}