Noor, N. Et Al. 2016. Pulse-mode Electrical Resistance Trimming of Ge2Sb2Te5 Phase Change Memory (PCM) Line Cells. International Semiconductor Device Research Symposium (ISDRS) 2016 , (Bethesda, United States Of America).

Noor, N., Muneer, S., Adnane, L., Khan, R. S., Ramadan, R., DİRİSAĞLIK, F., ... Cywar, A.(2016). Pulse-mode Electrical Resistance Trimming of Ge2Sb2Te5 Phase Change Memory (PCM) Line Cells . International Semiconductor Device Research Symposium (ISDRS) 2016, Bethesda, United States Of America

Noor, Nafisa Et Al. "Pulse-mode Electrical Resistance Trimming of Ge2Sb2Te5 Phase Change Memory (PCM) Line Cells," International Semiconductor Device Research Symposium (ISDRS) 2016, Bethesda, United States Of America, 2016

Noor, Nafisa Et Al. "Pulse-mode Electrical Resistance Trimming of Ge2Sb2Te5 Phase Change Memory (PCM) Line Cells." International Semiconductor Device Research Symposium (ISDRS) 2016 , Bethesda, United States Of America, 2016

Noor, N. Et Al. (2016) . "Pulse-mode Electrical Resistance Trimming of Ge2Sb2Te5 Phase Change Memory (PCM) Line Cells." International Semiconductor Device Research Symposium (ISDRS) 2016 , Bethesda, United States Of America.

@conferencepaper{conferencepaper, author={Nafisa Noor Et Al. }, title={Pulse-mode Electrical Resistance Trimming of Ge2Sb2Te5 Phase Change Memory (PCM) Line Cells}, congress name={International Semiconductor Device Research Symposium (ISDRS) 2016}, city={Bethesda}, country={United States Of America}, year={2016}}