A. B. M. H. Talukder Et Al. , "Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures," ECS Journal of Solid State Science and Technology , vol.13, no.2, 2024
Talukder, A. B. M. H. Et Al. 2024. Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures. ECS Journal of Solid State Science and Technology , vol.13, no.2 .
Talukder, A. B. M. H., Bin Kashem, M. T., Khan, R., DİRİSAĞLIK, F., Gokirmak, A., & Silva, H., (2024). Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures. ECS Journal of Solid State Science and Technology , vol.13, no.2.
Talukder, A. Et Al. "Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures," ECS Journal of Solid State Science and Technology , vol.13, no.2, 2024
Talukder, A. B. Et Al. "Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures." ECS Journal of Solid State Science and Technology , vol.13, no.2, 2024
Talukder, A. B. M. H. Et Al. (2024) . "Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures." ECS Journal of Solid State Science and Technology , vol.13, no.2.
@article{article, author={A. B. M. Hasan Talukder Et Al. }, title={Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures}, journal={ECS Journal of Solid State Science and Technology}, year=2024}