Asil, H. Et Al. 2009. Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics. APPLIED PHYSICS LETTERS , vol.94, no.25 .

Asil, H., GÜR, E., Cinar, K., & Coskun, C., (2009). Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics. APPLIED PHYSICS LETTERS , vol.94, no.25.

Asil, H. Et Al. "Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics," APPLIED PHYSICS LETTERS , vol.94, no.25, 2009

Asil, H. Et Al. "Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics." APPLIED PHYSICS LETTERS , vol.94, no.25, 2009

Asil, H. Et Al. (2009) . "Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics." APPLIED PHYSICS LETTERS , vol.94, no.25.

@article{article, author={H. Asil Et Al. }, title={Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics}, journal={APPLIED PHYSICS LETTERS}, year=2009}