S. Aydogu Et Al. , "InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.4, pp.347-352, 2012
Aydogu, S. Et Al. 2012. InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.4 , 347-352.
Aydogu, S., Akarsu, M., & Ozbas, O., (2012). InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.4, 347-352.
Aydogu, Senem, MUSTAFA AKARSU, And Omer Ozbas. "InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.4, 347-352, 2012
Aydogu, Senem Et Al. "InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.4, pp.347-352, 2012
Aydogu, S. Akarsu, M. And Ozbas, O. (2012) . "InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.4, pp.347-352.
@article{article, author={Senem Aydogu Et Al. }, title={InN and In1-xGax N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2012, pages={347-352} }