Boyarbay, B. Et Al. 2008. Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes. MICROELECTRONIC ENGINEERING , vol.85, no.4 , 721-726.

Boyarbay, B., Cetin, H., Kaya, M., & Ayylldiz, E., (2008). Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes. MICROELECTRONIC ENGINEERING , vol.85, no.4, 721-726.

Boyarbay, B. Et Al. "Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes," MICROELECTRONIC ENGINEERING , vol.85, no.4, 721-726, 2008

Boyarbay, B. Et Al. "Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes." MICROELECTRONIC ENGINEERING , vol.85, no.4, pp.721-726, 2008

Boyarbay, B. Et Al. (2008) . "Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes." MICROELECTRONIC ENGINEERING , vol.85, no.4, pp.721-726.

@article{article, author={B. Boyarbay Et Al. }, title={Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes}, journal={MICROELECTRONIC ENGINEERING}, year=2008, pages={721-726} }