S. Pat And M. Kokkokoglu, "Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering," OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.6, pp.855-858, 2010
Pat, S. And Kokkokoglu, M. 2010. Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.6 , 855-858.
Pat, S., & Kokkokoglu, M., (2010). Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.6, 855-858.
Pat, S., And M. Kokkokoglu. "Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering," OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.6, 855-858, 2010
Pat, S. And Kokkokoglu, M.. "Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.6, pp.855-858, 2010
Pat, S. And Kokkokoglu, M. (2010) . "Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.6, pp.855-858.
@article{article, author={S. Pat And author={M. Kokkokoglu}, title={Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering}, journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS}, year=2010, pages={855-858} }