Akademik Veri Yönetim Sistemi
PRAMANA-JOURNAL OF PHYSICS, cilt.78, sa.1, ss.147-154, 2012 (SCI-Expanded)
The Hall mobility of InNxAs1-x semiconductor alloys is calculated by solving the Boltzmann transport equation using the iterative method. All the major scattering mechanisms are included in the calculations. The Hall mobilities of InAs and InN0.01As0.99 are presented in the temperature range of 30-600 K. It is shown that incorporation of even small amount of nitrogen leads to an abrupt reduction of the Hall mobility in InNxAs1-x at low temperatures. The effect of alloy random scattering on the Hall mobility of InNxAs1-x is examined at 77 and 300 K as the mole fraction x varies from 0.0 to 0.1. It is seen that the Hall mobility drops sharply up to x = 0.02 for 77 K and reduces slowly as the temperature increases to 300 K compared to 77 K. The Hall mobilities calculated theoretically are compared with the experimental data available in the literature.