Akademik Veri Yönetim Sistemi
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.9, sa.3, ss.437-441, 2014 (SCI-Expanded)
In this paper, a novel reactive plasma technique is introduced for ZnO thin film production that does not result in a loss of quality of the films. The surface morphology of the deposited ZnO films was analyzed using field emission scanning electron microscopy and atomic force microscopy. Elemental analyses were performed using an energy dispersive X-ray spectrophotometer to determine the surface composition. The optical properties (e.g., refractive index and reflection) were determined using an interferometer. The band gaps of the deposited layer were calculated and measured using a Tauc plot and photoluminescence (PL). The obtained band gap was determined to be approximately 3.4 eV using these two methods. Excitation wavelengths of 305 nm and 375 nm were used for the PL measurements. Four emission lines were detected at 371 nm, 475 nm, 560 nm and 630 nm. Moreover, the electrical properties and nanomechanical properties (nano-hardness, Young's modulus and nano scratch test) of the deposited ZnO layer were determined. Based on these results, the surface of the deposited layer Was found to be very hard. The contact angle was measured using an optical tensiometer. The deposition time of the ZnO layer was 45 seconds. The thickness of the films was 120 nm. These results show that R-TVAs, a new reactive plasma technique, produce a high deposition rate for the generation of metal oxide thin films for solar cells, optoelectronic devices, and sensors, among other items.