Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method

PAT S., KORKMAZ Ş., Ozen S., ŞENAY V.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.657, ss.711-716, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 657
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.jallcom.2015.10.150
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.711-716
  • Anahtar Kelimeler: Optical analyses, C doped GaAs, Optical properties, Surface properties, MOLECULAR-BEAM EPITAXY, DISPERSIVE OPTICAL-CONSTANTS, PHOTOLUMINESCENCE, INP
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast deposition process for the other growth method such as metal organic chemical vapor deposition, molecular beam epitaxy, molecular organic molecular beam epitaxy. The smallest grain size of GaAs and doped GaAs were obtained by carbon doping process. Mean crystalline size and height of crystalline size were found to be 3.4 nm and 4 nm, respectively. Crystal direction was found to be (022) plane and (024) plane for the sample at 45.322 degrees and 75.060 degrees, respectively. The production process and obtained results show that used methods is very simple, low cost, eco friendly and very fast method for the carbon doped GaAs. (C) 2015 Elsevier B.V. All rights reserved.