Some Physical Properties of Co-Doped GaAs Thin Films Grown By Thermionic Vacuum Arc

Senay V., Ozen S., PAT S., KORKMAZ Ş., Mohammadigharehbagh R.

9th International Physics Conference of the Balkan-Physical-Union (BPU), İstanbul, Türkiye, 24 - 27 Ağustos 2015, cilt.1722 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1722
  • Doi Numarası: 10.1063/1.4944302
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (alpha hv)(2) vs. h.. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were 1.52 nm and 3.13 nm for the 100 nm and 200 nm film, respectively.