Band gap studies on Cu-doped borate-based semiconducting glassy thin films

KILIÇ G.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.8, ss.1111-1113, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 4 Sayı: 8
  • Basım Tarihi: 2010
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1111-1113
  • Anahtar Kelimeler: Vanadium, Borate, Glass, Thin film, Semiconductors, ELECTRICAL-PROPERTIES, CONDUCTIVITY, V2O5
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

In this paper, optical properties of B2O3 center dot Na2O center dot MgO center dot V2O5(:Cu) semiconducting glassy thin films (GTFs) were reported. The glassy thin films are produced with argon gas plasma under vacuum with RE sputtering technique. Obtained glassy thin films were observed to have amorphous structure as a result of XRD analysis. The fundamental absorption edge for the present glasses has been analyzed using the theory proposed by Davis and Mott. It has been observed that the fundamental absorption edge and cut-off wavelength shift towards red with the increase in V2O5 content.