Akademik Veri Yönetim Sistemi
International Journal of Physical and Mathematical Sciences, cilt.9, sa.12, ss.2444, 2015 (Hakemli Dergi)
The sun is one of the latest developments in renewable energy sources, which has a variety of application. Solar
energy is the most preferred renewable energy sources because it can be used directly, it protects the environment and it is
economic. In this work, we investigated that important parameter of GaAs-based solar cells with respect to the growth
temperature. The samples were grown on (100) oriented p-GaAs substrates by solid source Veeco GEN20MC MBE system
equipped with Ga, In, Al, Si, Be effusion cells and an Arsenic cracker cell. The structures of the grown samples are presented.
After initial oxide desorption, Sample 1 and Sample 2 were grown at about 585°C and 535°C, respectively. From the grown
structures, devices were fabricated by using the standard photolithography procedure. Current-voltage measurements were
performed at room temperature (RT). It is observed that Sample 1 which was grown at 585°C has higher efficiency and fill
factor compared to Sample 2. Hence, it is concluded that the growth temperature of 585°C is more suitable to grow GaAsbased
solar cells considering our samples used in this study.