Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

PAT, SUAT; KORKMAZ, ŞADAN; Ozen, Soner; ŞENAY, VOLKAN

doi:10.1007/s10854-015-2670-7

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Atıf İçin Kopyala

PAT S., KORKMAZ Ş., Ozen S., ŞENAY V.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.26, sa.4, ss.2210-2214, 2015 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 26 Sayı: 4
Basım Tarihi: 2015
Doi Numarası: 10.1007/s10854-015-2670-7
Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.2210-2214
Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

Using a thermionic vacuum arc, singleaEurocrystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info.