Akademik Veri Yönetim Sistemi
Ceramics International, 2026 (SCI-Expanded, Scopus)
In this study, WS2-doped MoS2 thin films are grown via radio frequency (RF) magnetron sputtering and subsequently oxidized to form W-doped MoO3 structures. The effects of W doping levels on the structural, optical, electrochemical, and electrochromic properties of the resulting films are systematically investigated. Field emission scanning electron microscopy (FESEM) images reveal that increased WS2 doping results in more defined, ridge-like nanostructures, which are retained after oxidation and contribute to enhanced electrochemical activity. X-ray diffraction (XRD) and Raman analyses confirm the successful transformation from MoS2 to α-MoO3 and the incorporation of W into the oxide lattice. Electrochemical measurements indicate that W doping enhances charge storage behavior, with MWSO40 exhibiting the highest current density and Li+ diffusion coefficient (2.12 × 10−9 cm2/s cathodic). In situ transmittance measurements at 700 nm demonstrate that W-doped films outperform the undoped MoO3 film (MBO), with MWSO30 achieving the highest and most stable optical modulation (55.8%) across various coloring potentials. Chronoamperometry results reveal that MWSO10 and MWSO30 exhibit the fastest and most stable switching kinetics, with coloring times as low as 5.4 s and bleaching times ranging from 2.7 to 4.7 s. In contrast, MWSO40 exhibits reduced reversibility and prolonged bleaching time at higher voltages, likely caused by Li+ ion trapping or structural degradation resulting from excessive doping.