6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.582
The aim of this work, the Hall mobility of InP semiconductor compound which is technologically important material is calculated with iterative method. Furthermore, it is investigated that the calculated values of mobility are depended on temperature interval 30-600K and carrier concentrations at 300K.