Numerical calculation of the Hall mobility of InP


Aydogu S., Ozbas O.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.582 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733323
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.582

Özet

The aim of this work, the Hall mobility of InP semiconductor compound which is technologically important material is calculated with iterative method. Furthermore, it is investigated that the calculated values of mobility are depended on temperature interval 30-600K and carrier concentrations at 300K.