Numerical calculation of the Hall mobility of InP

Aydogu S., Ozbas O.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.582 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733323
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.582
  • Eskisehir Osmangazi University Affiliated: Yes


The aim of this work, the Hall mobility of InP semiconductor compound which is technologically important material is calculated with iterative method. Furthermore, it is investigated that the calculated values of mobility are depended on temperature interval 30-600K and carrier concentrations at 300K.