Simulation of storage time versus reverse bias current for p(+)n and pin diodes

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Copy For Citation

Keserlioglu M. S., ERKAYA H. H.

TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES, vol.19, no.1, pp.87-96, 2011 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 19 Issue: 1
• Publication Date: 2011
• Doi Number: 10.3906/elk-0812-29
• Journal Name: TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
• Page Numbers: pp.87-96
• Eskisehir Osmangazi University Affiliated: Yes

Abstract

In this study, the reverse-recovery behaviors of pin and p(+) n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p(+) n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.