Simulation of storage time versus reverse bias current for p(+)n and pin diodes

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Atıf İçin Kopyala

Keserlioglu M. S., ERKAYA H. H.

TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES, cilt.19, sa.1, ss.87-96, 2011 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 19 Sayı: 1
• Basım Tarihi: 2011
• Doi Numarası: 10.3906/elk-0812-29
• Dergi Adı: TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
• Sayfa Sayıları: ss.87-96
• Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

In this study, the reverse-recovery behaviors of pin and p(+) n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p(+) n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.