Akademik Veri Yönetim Sistemi
TURKISH PHYSICAL SOCIETY 39TH INTERNATIONAL PHYSICS CONGRESS, A, Muğla, Türkiye, 31 Ağustos - 04 Eylül 2023, cilt.1, sa.1, ss.140
V2O5, one of the important transition metal oxides, has been used in many doped
nanostructure studies in recent years due to its oxidation states ranging from V2+ to V5+.
Zn-doped V2O5 thin films are used in various gas sensors, optoelectronic and
electrochromic devices. Thermionic Vacuum Arc (TVA) is a system that generates
plasma only in the vapor of the material whose thin film is to be deposited. Thin films
deposited by TVA are highly surface adherent, flat, pure, and macro-particle free. In this
study, V2O5 thin films containing 5% and 10% Zn and V2O5-Zn layered film were
deposited on glass substrates. XRD, SEM, EDX, AFM, and UV-Vis analyses of the
deposited Zn-doped V2O5 thin films were performed. The SEM images of the Zn-doped
films show very homogeneous and similar surface images. The roughness values of the
Zn-doped thin films are Rq= 4.865 nm for 5% Zn-doped film, Rq= 2.233 nm for 10% Zndoped film, and 38.155 nm for V2O5-Zn layered thin film. The energy band gap (Eg) was
calculated as 3.74 eV in the 5% doped film and 3.72 eV in the 10% doped film.