Crystallization of Silicon Microstructures Through Rapid Self-Heating for High-Performance Electronics on Arbitrary Substrates


Silva H., Bakan G., Cywar A., Williams N., Dirisaglik F., Henry N., ...Daha Fazla

NANOSCIENCE AND NANOTECHNOLOGY LETTERS, cilt.4, sa.10, ss.970-976, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 4 Sayı: 10
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1166/nnl.2012.1438
  • Dergi Adı: NANOSCIENCE AND NANOTECHNOLOGY LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.970-976
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

Lithographically defined suspended nanocrystalline silicon microstructures are crystallized through rapid (mu s) self-heating and growth-from-melt. SEM imaging and electrical resistance measurements suggest formation of two large single-crystal domains upon re-solidification, initiated from the cold pads anchoring the structure to the underlying film. The crystallized regions acquire uniform cylindrical or flat ribbon forms depending on the size, geometry and electrical stress conditions. The structures crystallized as flat ribbons have extremely smooth surfaces and no visible line-edge roughness, suggesting faceted growth. Simulation results indicate that the anchors and the underlying film remain at room temperature making this rapid self-heating technique compatible with low temperature substrates.