Monte Carlo calculation of electron transport properties of GaxIn1-xN

Akarsu M., Aydogu S., Ozbas O.

International Conference on Superlattices, Nano-Structures and Nano-Devices, İstanbul, Türkiye, 30 Temmuz - 04 Ağustos 2006, cilt.4, ss.664-665, (Tam Metin Bildiri) identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 4
  • Doi Numarası: 10.1002/pssc.200673235
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.664-665
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

The Monte Carlo method is used to simulate electron transport for electric field strength up to 500 kV/cm in GaxIn1-xN for composition x range from 0.0 to 1.0. Calculations of the electron steady-state drift velocity, average energy and valley occupancy are examined at a temperature of 300 K. Scattering mechanisms considered in the simulations are ionized impurity, polar optical phonon, acoustic phonon, non-polar optical phonon, intervalley, dislocation and alloy scatterings. Effects of the alloy scatterings on the drift velocity are examined. (c) 2007 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.