Monte Carlo calculation of electron transport properties of GaxIn1-xN

Akarsu M., Aydogu S., Ozbas O.

International Conference on Superlattices, Nano-Structures and Nano-Devices, İstanbul, Turkey, 30 July - 04 August 2006, vol.4, pp.664-665 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 4
  • Doi Number: 10.1002/pssc.200673235
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.664-665
  • Eskisehir Osmangazi University Affiliated: Yes

Abstract

The Monte Carlo method is used to simulate electron transport for electric field strength up to 500 kV/cm in GaxIn1-xN for composition x range from 0.0 to 1.0. Calculations of the electron steady-state drift velocity, average energy and valley occupancy are examined at a temperature of 300 K. Scattering mechanisms considered in the simulations are ionized impurity, polar optical phonon, acoustic phonon, non-polar optical phonon, intervalley, dislocation and alloy scatterings. Effects of the alloy scatterings on the drift velocity are examined. (c) 2007 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.