Preparation and characterization of aluminum-incorporated cadmium oxide films

AKYÜZ İ., Kose S., Atay F., Bilgin V.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.13, sa.2, ss.109-114, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 13 Sayı: 2
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.mssp.2010.05.006
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.109-114
  • Anahtar Kelimeler: Semiconductors, X-ray diffraction, Electrical properties, CDO THIN-FILMS, OXYGEN PARTIAL-PRESSURE, OPTICAL-PROPERTIES, TRANSPARENT
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

Opto-electronic and photovoltaic solar cell technologies which are developing day by day need novel and alternative materials. Also, economic cost is the other important parameter when producing and using these materials. With this purpose, we have prepared aluminum-incorporated CdO films by ultrasonic spray pyrolysis (USP) technique. Firstly, elemental analyses were performed to observe the distribution rate of Al in the structure. We have attempted to explain the structural and electrical properties of these films in detail. The crystalline structure was studied by X-ray diffraction (XRD). Besides, some structural parameters such as texture coefficient, grain size and dislocation density were calculated. Van der Pauw and Hall measurements were used to investigate the electrical properties. Electrical conductivity, carrier concentration and mobility values were determined for all films. Finally, we conclude that Al-incorporated CdO films with low Al concentrations will be promising materials for future works because of their high conductivity and mobility values as compared to others. (C) 2010 Elsevier Ltd. All rights reserved.