Few‐layer graphene coated on indium tin oxide electrodes prepared by chemical vapor deposition and their enhanced glucose electrooxidation activity

Çağlar A., Ulaş B., Gökdoğan Şahin Ö., Demir Kıvrak H.

Energy Storage, vol.1, no.4, 2019 (ESCI) identifier

  • Publication Type: Article / Article
  • Volume: 1 Issue: 4
  • Publication Date: 2019
  • Doi Number: 10.1002/est2.73
  • Journal Name: Energy Storage
  • Journal Indexes: Emerging Sources Citation Index (ESCI), Applied Science & Technology Source, INSPEC
  • Keywords: chemical vapor deposition, glucose electrooxidation, graphene, indium tin oxide
  • Eskisehir Osmangazi University Affiliated: No


At present, few-layer graphene is deposited on copper (Cu) foil by chemical vapor deposition (CVD) method. Then, the few-layer graphenes produced on the Cu foil are coated onto the indium tin oxide (ITO) electrode to investigate their glucose electrooxidation activities. Hexane and hydrogen flow rate and deposition time parameters with CVD method are examined on different Cu foils. These electrodes are characterized by scanning electron microscopy-energy dispersive X-ray analysis (SEM-EDX), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Furthermore, glucose electrooxidation is examined with cyclic voltammetry (CV), chronoamperometry (CA), and electrochemical impedance spectroscopy (EIS) measurements. One could note that the graphene network is clearly visible from SEM images. The deconvoluted XPS spectrum indicates that carbon appeared in the form of non-oxygenated ring C atoms for few-layer graphene. The few-layer graphene structure is confirmed by Raman analysis. Few-layer graphene/ITO produced at 5 sccm Hexane and 50 sccm hydrogen flow rate and 20minutes deposition time (G7/ITO) reveals the best electrode activity. The specific activity of G7/ITO electrode is obtained as 6.58mAcm(-2). According to CV, CA, and EIS results, G7/ITO electrode has high electrocatalytic activity, stability, and resistance in comparison with other electrodes.