Thermionic vacuum arc synthesis of Hf-doped GaN: Nanocrystalline films with p-type conductivity
MRS Communications, 2026 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Publication Date: 2026
- Doi Number: 10.1557/s43579-026-00966-3
- Journal Name: MRS Communications
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
- Keywords: Electrical properties, Ga, Hf, Morphology, Nitride, Physical vapor deposition (PVD)
- Eskisehir Osmangazi University Affiliated: Yes
Abstract
This study investigated the physical properties of gallium nitride doped with hafnium, a subject of recent research. The hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method was aimed at achieving p-type current spreading layer properties with a low roughness value. The hafnium-doped gallium nitride thin film, with a thickness of 55 nm, exhibited properties that were consistent with the existing literature. In nanotechnological applications, hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method has shown suitable properties for electronic power applications and light-emitting device applications.