Thermionic vacuum arc synthesis of Hf-doped GaN: Nanocrystalline films with p-type conductivity

Özen S., PAT S., KORKMAZ Ş.

MRS Communications, 2026 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1557/s43579-026-00966-3
  • Dergi Adı: MRS Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Anahtar Kelimeler: Electrical properties, Ga, Hf, Morphology, Nitride, Physical vapor deposition (PVD)
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

This study investigated the physical properties of gallium nitride doped with hafnium, a subject of recent research. The hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method was aimed at achieving p-type current spreading layer properties with a low roughness value. The hafnium-doped gallium nitride thin film, with a thickness of 55 nm, exhibited properties that were consistent with the existing literature. In nanotechnological applications, hafnium-doped gallium nitride thin film produced by the thermionic vacuum arc method has shown suitable properties for electronic power applications and light-emitting device applications.