Nanoscale Accumulated Body Si nMOSFETs

Akbulut M. B., Dirisaglik F., Cywar A., Faraclas A., Pence D., Patel J., ...Daha Fazla

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.65, sa.4, ss.1283-1289, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 65 Sayı: 4
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1109/ted.2018.2809643
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1283-1289
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

Narrow- and short-channel inversion-mode nMOSFETs with an accumulated body are experimentally demonstrated down to WxL = 17-nm x 37-nm scale. Accumulation of holes on the p-type body is achieved by applying a negative bias on an independently controlled p+ polysilicon side-gate structure surrounding the FET body. Affecting the channel from two sides, electrical characteristics of the transistor can be modified, especially the threshold voltage (V-T). V-T sensitivity to the side-gate bias (V-side) shows a strong dependence on the device width for W < 40 nm, exponentially increasing to above 1 V/V for W = 17 nm. This sensitivity is significantly larger than what is predicted by 3-D Technology Computer Aided Design simulations. The devices exhibit very low leakage, good subthreshold slope, and improved drain-induced barrier lowering with the accumulation of the body.