Molecular beam epitaxy of N-polar InGaN

Nath D. N., GÜR E., Ringel S. A., Rajan S.

APPLIED PHYSICS LETTERS, cilt.97, sa.7, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 97 Sayı: 7
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1063/1.3478226
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: gallium compounds, III-V semiconductors, indium compounds, molecular beam epitaxial growth, photoluminescence, plasma deposition, semiconductor growth, semiconductor thin films, BAND-GAP, INN, GROWTH, DIODES, LIGHT, MBE
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

We report on the growth of N-polar In(x)Ga(1-x)N by N(2) plasma-assisted molecular beam epitaxy. Ga-polar and N-polar InGaN films were grown at different growth temperatures and the composition was estimated by photoluminescence (PL) measurements. A growth model that incorporates the incoming and desorbing atomic fluxes is proposed to explain the compositional dependence of InGaN on the flux of incoming atomic species and growth temperature. The growth model is found to be in agreement with the experimental data. The peak PL intensity for N-face samples is found to exhibit a two order of magnitude increase for a 100 degrees C increase in growth temperature. Besides, at 600 nm, the N-face sample shows more than 100 times higher PL intensity than Ga-face sample at comparable wavelengths indicating its superior optical quality. The understanding of growth kinetics of InGaN presented here will guide the growth of N-polar InGaN in a wide range of growth temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478226]