Silicon nanowire network metal-semiconductor-metal photodetectors

Mulazimoglu E., COŞKUN Ş., Gunoven M., Butun B., Ozbay E., TURAN R., ...Daha Fazla

APPLIED PHYSICS LETTERS, cilt.103, sa.8, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 103 Sayı: 8
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1063/1.4819387
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

We report on the fabrication and characterization of solution-processed, highly flexible, silicon nanowire network based metal-semiconductor-metal photodetectors. Both the active part of the device and the electrodes are made of nanowire networks that provide both flexibility and transparency. Fabricated photodetectors showed a fast dynamic response, 0.43 ms for the rise and 0.58 ms for the fall-time, with a decent on/off ratio of 20. The effect of nanowire-density on transmittance and light on/off behavior were both investigated. Flexible photodetectors, on the other hand, were fabricated on polyethyleneterephthalate substrates and showed similar photodetector characteristics upon bending down to a radius of 1 cm. (C) 2013 AIP Publishing LLC.