ZnSe nanocrystalline thin films deposition on Si substrate by thermionic vacuum arc


Ozkan M., Ekem N., Balbag M. Z. , Pat S.

PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART L-JOURNAL OF MATERIALS-DESIGN AND APPLICATIONS, cilt.226, ss.103-108, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 226
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1177/1464420711433095
  • Dergi Adı: PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART L-JOURNAL OF MATERIALS-DESIGN AND APPLICATIONS
  • Sayfa Sayıları: ss.103-108

Özet

ZnSe nanocrystalline thin films were deposited on Si wafer using thermionic vacuum arc (TVA) method. For the first time, binary semiconductor thin films were deposited by TVA. The microstructure and surface morphology of the ZnSe nanocrystalline thin films were investigated using X-ray diffractometry, scanning electron microscopy, energy-dispersive X-ray spectrometry, and atomic force microscopy (AFM). Grain dimensions and grain size were determined by AFM measurement. Moreover, spectroscopic ellipsometer was used to characterize the refractive indices of ZnSe nanocrystalline thin film. According to experimental measurement, ZnSe nanocrystalline thin film was polycrystalline with (1 1 1), (2 2 0), and (3 1 1) preferred orientations. Refractive indices were approximately 2.50 in all visible ranges. Our results show that nanocrystalline thin films can be deposited with TVA method.