N-Polar III-Nitride Green (540 nm) Light Emitting Diode

Akyol F., Nath D. N., GÜR E., Park P. S., Rajan S.

JAPANESE JOURNAL OF APPLIED PHYSICS, cilt.50, sa.5, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 50 Sayı: 5
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1143/jjap.50.052101
  • Dergi Adı: JAPANESE JOURNAL OF APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N-2 plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In0.29Ga0.71N quantum wells were grown at a temperature of 600 degrees C by applying a new growth model. LED structures exhibited green emission, and electroluminescence measurements on the test structure showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm(2). This work is the first demonstration of an N-polar LED with emission in the green wavelength range. (C) 2011 The Japan Society of Applied Physics