Effect of intermittent oxygen exposure on chemical vapor deposition of graphene

TEMİZ S., Mutlu Z., Shahrezaei S., Ozkan M., Ozkan C. S.

MRS COMMUNICATIONS, cilt.7, sa.4, ss.826-831, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 7 Sayı: 4
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1557/mrc.2017.111
  • Dergi Adı: MRS COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.826-831
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

Chemical vapor deposition is the most proficient method for growing graphene on copper foils due to its scalability, repeatability, and uniformity, etc. Herein, we systematically study the effect of oxygen (O-2) exposure on graphene growth. We introduced O-2 before and during the growth, and then studied its effects on the morphology, crystallinity, and nucleation density of graphene. We observe that introducing O-2 during growth significantly improves the graphene crystallinity while pre-dosing O-2 before growth reduces the graphene nucleation density. These studies suggest that intermittent O-2 exposure play a significant role in graphene growth, enabling scalable production of high-quality graphene.