Modeling of Thermoelectric Effects in Phase Change Memory Cells

Faraclas A., Bakan G., Adnane L., Dirisaglik F., Williams N. E., Gokirmak A., ...Daha Fazla

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.61, sa.2, ss.372-378, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 61 Sayı: 2
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1109/ted.2013.2296305
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.372-378
  • Anahtar Kelimeler: Crystalline/amorphous phase transition, Ge2Sb2Te5 (GST), mushroom cell, thermal boundary resistance (TBR), thermoelectricity, Thomson/Peltier heat, THERMAL-BOUNDARY RESISTANCE, CRYSTALLIZATION, SIMULATION
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

Thermoelectric effects on phase change memory elements are computationally analyzed through 2-D rotationally symmetric finite-element simulations of reset operation on a Ge2Sb2Te5 (GST) mushroom cell with 10-nm critical dimension. Temperature-dependent material parameters are used to determine the thermoelectric contributions at the junctions (Peltier heat) and within GST (Thomson heat). Thermal boundary resistances at the GST interfaces enhance the Peltier heat contribution. Peak current densities and thermal gradients are in the order of 250 MA/cm(2) and 50 K/nm. Overall, thermoelectric effects are shown to introduce significant voltage polarity dependence on the operation dynamics, peak temperatures, thermal gradients, volume of the molten region, energy required, and resistance contrast. Resistance contrasts of similar to 8.8 x 10(3) were realized with 155 mu A for the positive polarity and 245 mu A for the negative polarity.