ZnO thin film preparation using RF sputtering at various oxygen contents
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.10, sa.12, ss.3279-3282, 2008 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 10 Sayı: 12
- Basım Tarihi: 2008
- Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.3279-3282
- Eskişehir Osmangazi Üniversitesi Adresli: Evet
Özet
In recent years, nanostructured ZnO films have been receiving particular attention because not only do they show many valuable properties as semiconducting materials, but also due to their relatively easy methods for synthesis. In this paper, ZnO thin films were prepared with RF sputtering at constant total gas pressure, with different oxygen and argon contents. Different working parameters such distance between the cathode and sample, sample dimensions, as well as variable interelectrodic spaces were investigated. Our aim is to define the optimum percentage of oxygen contents for ZnO thin films production. Thicknesses, refractive index, thickness homogeneity, UV spectra, band-gap energy, absorption spectra of the obtained thin films were carried out in this study.