Al and B co-doped ZnO samples as an alternative to ITO for transparent electronics applications

Gultepe O., Atay F.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.33, sa.18, ss.15039-15053, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 18
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s10854-022-08421-4
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.15039-15053
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

In our study, Al and B co-incorporated ZnO samples were synthesized by spin coating as an alternative to ITO films, which are the favorite of solar cell applications. B element was incorporated to the ZnO film at different rates by keeping the doping ratio of Al element constant. Some features of the produced films were examined using XRD patterns, four-probe technique, atomic force and scanning electron microscopies, UV-vis spectrophotometry, spectroscopic ellipsometry and photoluminescence spectrometry. The Al-B co-doping process has made the optical, surface and electrical features of ZnO film highly suitable for TCO applications, compared to only Al-incorporating process. The resistivity for ZnO film were decreased from 6.12 x 10(2 )omega cm to 2.07 x 10(-4) omega cm with Al-B co-doping treatment. In addition, Al and B elements caused a significant increase in the transmittance values, surface homogeneity and figure of merit value of the ZnO film. All analyzes proved that Al-B co-incorporated ZnO films can be an alternative to ITO films in TCO applications due to their favorable physical properties.