Akademik Veri Yönetim Sistemi
Solar Energy, cilt.303, 2026 (SCI-Expanded, Scopus)
In this study, the effect of heat treatment atmosphere on Sb2S3 films which stand out as an emerging photovoltaic material was investigated. Sb2S3 films were produced by heat treatments at 325 °C in N2, Ar, N2-S, and Ar-S (nitrogen, argon, nitrogen-sulfur, argon-sulfur) atmospheres using a quartz tube furnace. It was determined that the optical band gap values decreased from 2.36 eV to 1.74 eV by annealing and Sb2S3 films annealed in Ar atmosphere have an atomic % value very close to the desired stoichiometric ratio. However, EDX analysis showed a clear sulfur loss even an additional sulfur vapor used in annealing processes. This study showed that difficulty in controlling the sulfur vapor in open flow quartz tube systems may cause deformation on both bulk and surface morphology and optimization of parameters such as annealing temperature, the amount of sulfur particles placed in the quartz tube, and the carrier gas flow rate may be considered. XRD and Raman analyses showed that the heat-treated films were formed in an orthorhombic structure without any secondary phase or oxidation. It has been determined that heat treatment in argon atmosphere has a positive effect on structural and surface properties, and it is predicted that the efficiency values of Sb2S3 based devices can be increased by optimizing the heat treatment parameters in this atmosphere.