Facile Synthesis and Characterization of Two Dimensional Layered Tin Disulfide Nanowalls


Mutlu Z., Shahrezaei S., TEMİZ S. , Ozkan M., Ozkan C. S.

JOURNAL OF ELECTRONIC MATERIALS, vol.45, no.4, pp.2115-2120, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 4
  • Publication Date: 2016
  • Doi Number: 10.1007/s11664-015-4279-2
  • Title of Journal : JOURNAL OF ELECTRONIC MATERIALS
  • Page Numbers: pp.2115-2120

Abstract

Two dimensional layered metal chalcogenides, especially tin sulfides, have recently received great interest due to their enticing physical and chemical properties and hold promise for various applications. We report on synthesis of phase-pure two dimensional tin disulfide nanowalls by a facile vapor-phase synthesis method on insulator substrates such as silicon dioxide and magnesium oxide using tin dioxide and sulfur powders as precursors. The synthesized tin disulfide nanowalls have been characterized to study their fundamental properties by using various techniques such as scanning electron microscopy, x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopy. The synthesized films have an open network structure constituted of very uniform interconnected nanowalls with high crystallinity.