High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Dirisaglik F. , Bakan G., Jurado Z., Muneer S., Akbulut M., Rarey J., ...More

NANOSCALE, vol.7, no.40, pp.16625-16630, 2015 (Journal Indexed in SCI) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 7 Issue: 40
  • Publication Date: 2015
  • Doi Number: 10.1039/c5nr05512a
  • Title of Journal : NANOSCALE
  • Page Numbers: pp.16625-16630


During the fast switching in Ge2Sb2Te5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.