High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Dirisaglik F., Bakan G., Jurado Z., Muneer S., Akbulut M., Rarey J., ...Daha Fazla

NANOSCALE, cilt.7, sa.40, ss.16625-16630, 2015 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 7 Sayı: 40
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1039/c5nr05512a
  • Dergi Adı: NANOSCALE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.16625-16630
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

During the fast switching in Ge2Sb2Te5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.