On the role of Al in ultrasonically sprayed ZnO films


Kurtaran S., Aldag S., Ofofoglu G., Akyüz İ., Atay F.

Materials Chemistry and Physics, cilt.185, ss.137-142, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 185
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.matchemphys.2016.10.016
  • Dergi Adı: Materials Chemistry and Physics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED)
  • Sayfa Sayıları: ss.137-142
  • Anahtar Kelimeler: Thin films, Surface properties, Optical properties, Electrical conductivity, EDS, DOPED ZINC-OXIDE, TRANSPARENT CONDUCTING OXIDES, THIN-FILMS, OPTICAL-PROPERTIES, SUBSTRATE-TEMPERATURE, DOPING CONCENTRATION, PYROLYSIS, GROWTH, DEPOSITION, PHOTOLUMINESCENCE
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

© 2016 Elsevier B.V.In this work, Al incorporated ZnO films have been deposited by Ultrasonic Spray Pyrolysis technique. Behavior of Al element in the structure has been tried to be clarified by investigating the structural, optical, surface and electrical properties. Compositional analysis has been performed by EDX and Al contents in the coatings have been determined as 1.1, 2.8 and 3.1 at %. X-ray diffraction patterns have shown that all films are polycrystalline with hexagonal wurtzite structure and the dominant peak is (002) ZnO for films except the one containing the highest amount of Al. Above the Al content of 2.8 at %, appearance of new phases such as Al2O3 and ZnAl2O4 in XRD patterns refers a solubility limit at this doping rate. Thicknesses and optical constants (refractive index and extinction coefficient) have been determined by spectroscopic ellipsometry technique using Cauchy-Urbach model. Al doping above the solubility limit has caused ZnO films to have lower refractive index values. Also, AFM images have shown that surface morphologies of the films lose their spherical and granular texture and transform to a randomly clustered formation with sharper upper edges above the solubility limit. Transmittance and electrical resistivity measurements have shown that Al incorporation below solubility limit (1.1 and 2.8 at %) allows maintaining the transparency together with low resistivity values. These films have value to work on and may be promising materials for optoelectronic applications.