Band gap studies on Cu-doped borate-based semiconducting glassy thin films

KILIÇ G.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.8, pp.1111-1113, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 4 Issue: 8
  • Publication Date: 2010
  • Journal Name: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1111-1113
  • Keywords: Vanadium, Borate, Glass, Thin film, Semiconductors, ELECTRICAL-PROPERTIES, CONDUCTIVITY, V2O5
  • Eskisehir Osmangazi University Affiliated: Yes

Abstract

In this paper, optical properties of B2O3 center dot Na2O center dot MgO center dot V2O5(:Cu) semiconducting glassy thin films (GTFs) were reported. The glassy thin films are produced with argon gas plasma under vacuum with RE sputtering technique. Obtained glassy thin films were observed to have amorphous structure as a result of XRD analysis. The fundamental absorption edge for the present glasses has been analyzed using the theory proposed by Davis and Mott. It has been observed that the fundamental absorption edge and cut-off wavelength shift towards red with the increase in V2O5 content.