A model for the resonant tunneling semiconductor-controlled rectifier

Barkana B. D., ERKAYA H. H.

MICROELECTRONICS JOURNAL, cilt.38, ss.871-876, 2007 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.mejo.2007.07.001
  • Dergi Adı: MICROELECTRONICS JOURNAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.871-876
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

A new switch called a resonant-tunneling-semiconductor-controlled rectifier (RT-SCR) has been proposed. A two-transistor model is used for the device. One of the transistors in the two-transistor model is assumed to be a resonant tunneling transistor (RTT), while the other transistor is taken to be a bipolar transistor. The current-voltage relationships of the device have been numerically obtained and compared with the traditional thyristor characteristics. The new device requires smaller turn-on gate voltage than a comparable traditional device for the same gate current. This indicates that in comparison with the traditional thyristor, a smaller control current may be used to turn on the device at a particular voltage. (C) 2007 Elsevier Ltd. All rights reserved.