Akademik Veri Yönetim Sistemi
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, cilt.1, ss.1-10, 2025 (SCI-Expanded)
This paper explores the significance of zinc oxide (ZnO) nanoparticles (NPs) in enhancing the microelectronic of a semiconducting polymer polyaniline (PANI) for its applications in heterojunction device Ag/PANI-ZnO/TiO2/n-Si which is fabricated via simple spin coating technique by depositing a thin layer of PANI-ZnO NC on pre-deposited TiO2 layer/n-silicon (n-Si) substrate. TiO2 acts as buffer layer. To study microelectronic and interface properties of the fabricated device, current-voltage (I–V) characteristics are performed at 300 K in dark conditions (0 lux), which shows asymmetric behavior with a rectification ratio (RR) of 193 at ±2.5 V that confirm the formation of heterojunction device. The governing interface parameters of the device such as series resistance (Rs), shunt resistance (Rsh), ideality factor (n), charge carrier mobility (µ) and barrier height (ϕb) are measured by conventional I-V method and are verified by the Cheungs’ functions and charge carriers’ conduction mechanism is probed by Mott-Gurney model. Results obtained show that the application of ZnO NPs enhances the microelectronic characteristics of the device as compared to stand-alone polymer devices. Structural, optical bandgap and morphological features of PANI-ZnO NC are investigated by x-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectroscopy and scanning electron microscopy (SEM) as well as atomic force microscopy (AFM).