The investigation of photoluminescence properties in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum wells structures with varying well number

Sonmez F., Ardali S., Arpapay B., Tiras E.

PHYSICA B-CONDENSED MATTER, cilt.630, 2022 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 630
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.physb.2022.413703
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs) samples with a different quantum well number (two, three, and four) grown by molecular beam epitaxy have been studied in the temperature range between 3 and 300 K. The redshift-blueshift-redshift in the PL peak energy of InGaN well, which is known that as S-shaped behavior, is observed with increasing temperature in the investigated samples. S-shaped behavior is associated with carrier localization states and inhomogeneity in InGaN/GaN MQWs samples. This behavior is explained with the theoretical band tail model. The parameters showing the effect of carrier localization degree are determined and discussed in detail. Furthermore, it is presented the activation energy of charge carriers by using InGaN related-normalized PL peak intensity as a function of the reverse of temperature and Arrhenius function for all samples. The highest PL intensity is obtained in sample B with 3-QWs. Determining carrier localization effect and activation energy plays a vital role in luminescence efficiency and quality of InGaN/GaN MQWs devices.