Research Information System
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.131, no.2, 2025 (SCI-Expanded, Scopus)
This study introduces a novel structure based on a GaAs quantum well for implementing XOR, OR, and NAND light logic gates. This structure has unique advantages compared to classical p-n junction-based devices, including polarity-independent operation, radiation emission, and a more straightforward design. The suggested structure consists of two photoconductive devices and a logic gate device. When 850 nm light from the fiber optic cable illuminates the photoconductive device, the photoconductive device and the pulsed signal source are triggered simultaneously and supply the logic gate device, enabling it to perform the desired logic operation (XOR, OR, and NAND). Notably, at room temperature, the primary emission wavelength of these optical logic gate devices is 812 +/- 1 nm. This design offers a compact, efficient, and versatile approach to light logic gates, with potential applications in optical computing and communication systems. Furthermore, the data transfer rate of these optical logic gates has been demonstrated to be comparable to that of electrical circuits currently used in technology.