Investigation of transmittance spectra in Si-based one-dimensional photonic crystals with defect

Korkmaz V., Cetin A., Ucgun E.

International Conference on Technological Advances in Electrical, Electronics and Computer Engineering (TAEECE), Konya, Türkiye, 9 - 11 Mayıs 2013, ss.558-562 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.1109/taeece.2013.6557335
  • Basıldığı Şehir: Konya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.558-562
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

By using the transfer matrix method (TMM), we analyzed the properties of the transmittance spectra and photonic band of light in the ID (one-dimensional) photonic structure with defect, which was fictionalized with two different dielectric layers. The device is designed as multilayer Si/SiO2 structure with defect in the middle of the periodic photonic crystal system. The change of defect mode and the band gap in lambda(o)=1550 nm central wavelength in optical communication region is investigated for the different angles of incidence of light and two different dielectric defect layers.