International Conference on Telecommunications and Networking (TeNe)/International Conference on Industrial Electronics, Technology and Automation (IETA), ELECTR NETWORK, 01 January 2006, pp.75-77
Conference Paper / Full Text
Eskisehir Osmangazi University Affiliated:
A model is proposed for the resonant tunneling bipolar transistor current voltage characteristics. The model is based on a model for the resonant tunneling diode and the traditional Ebers-Moll model of the bipolar transistor. A device structure was simulated, and characteristics that resemble that of the resonant tunneling transistor were obtained.