A model for resonant tunneling bipolar transistors

Barkana B. D., ERKAYA H. H.

International Conference on Telecommunications and Networking (TeNe)/International Conference on Industrial Electronics, Technology and Automation (IETA), ELECTR NETWORK, 01 Ocak 2006, ss.75-77 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.1007/978-1-4020-6266-7_14
  • Basıldığı Ülke: ELECTR NETWORK
  • Sayfa Sayıları: ss.75-77
  • Eskişehir Osmangazi Üniversitesi Adresli: Evet

Özet

A model is proposed for the resonant tunneling bipolar transistor current voltage characteristics. The model is based on a model for the resonant tunneling diode and the traditional Ebers-Moll model of the bipolar transistor. A device structure was simulated, and characteristics that resemble that of the resonant tunneling transistor were obtained.