A model for resonant tunneling bipolar transistors

Barkana B. D., ERKAYA H. H.

International Conference on Telecommunications and Networking (TeNe)/International Conference on Industrial Electronics, Technology and Automation (IETA), ELECTR NETWORK, 01 January 2006, pp.75-77 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.1007/978-1-4020-6266-7_14
  • Country: ELECTR NETWORK
  • Page Numbers: pp.75-77
  • Eskisehir Osmangazi University Affiliated: Yes

Abstract

A model is proposed for the resonant tunneling bipolar transistor current voltage characteristics. The model is based on a model for the resonant tunneling diode and the traditional Ebers-Moll model of the bipolar transistor. A device structure was simulated, and characteristics that resemble that of the resonant tunneling transistor were obtained.