Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas

DEMİR İ., ALTUNTAŞ İ., KASAPOĞLU A. E., Mobtakeri S., Guer E., Elagoz S.

SEMICONDUCTORS, vol.52, no.16, pp.2030-2038, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 52 Issue: 16
  • Publication Date: 2018
  • Doi Number: 10.1134/s1063782618160066
  • Journal Name: SEMICONDUCTORS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2030-2038
  • Keywords: metalorganic vapor phase epitaxy, gallium nitride, epitaxy, dislocation, 2-STEP GROWTH, MORPHOLOGY, QUALITY, DISLOCATIONS, TEMPERATURE, LAYERS
  • Eskisehir Osmangazi University Affiliated: No


We report the effect of total carrier gas flow of GaN during both GaN nucleation layer and high temperature GaN growth steps on structural, optical, electrical and morphological properties. The formation of dislocations in GaN layer and their effects were investigated in detail as a function of carrier gas flow. It has been found that the more carrier gas requires longer recovery time for transition from 3D (3 dimensional) to 2D growth and results in smaller edge-type dislocation density. The images obtained from the AFM measurements have shown terraces widths varying between 60-150 nm depending on the hydrogen flow rate.