The investigation of mole fraction dependence of mobility for InxGa1-xN alloy

Aydogu, S; Ozbas, O

doi:10.1016/j.mssp.2004.12.004

The investigation of mole fraction dependence of mobility for InxGa1-xN alloy

Atıf İçin Kopyala

Aydogu S., Ozbas O.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.8, sa.4, ss.536-539, 2005 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 8 Sayı: 4
Basım Tarihi: 2005
Doi Numarası: 10.1016/j.mssp.2004.12.004
Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.536-539
Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

We have calculated the mobility of InxGa1-xN alloy by the iterative method interval x = 0 - 1 in low field. We have investigated x mole fraction dependence of calculated mobility. The Boltzmann transport equation involved in relevant scattering mechanisms has been solved. These scattering mechanisms are polar optic phonon scattering, ionized impurity scattering, acoustic phonon deformation potential scattering, acoustic phonon piezoelectric scattering and alloy scattering. Vegard's law was used for the lattice constants of these compounds. Furthermore, Phillip's electronegative difference theorem and the values of alloy potential in Ref. [11] were used to calculate the alloy scattering potential for alloy scattering and for comparison. (c) 2005 Elsevier Ltd. All rights reserved.