Growth and Characterization of InGaN Thin Films on Si (111) Substrate by RF Magnetron Sputtering: N-2 Gas Flow Effect

ERDOĞAN E., KUNDAKÇİ M., KASAPOĞLU A. E., GÜR E.

33rd International Physics Congress of the Turkish-Physical-Society (TPS), Bodrum, Türkiye, 6 - 10 Eylül 2017, cilt.1935 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1935
  • Doi Numarası: 10.1063/1.5026007
  • Basıldığı Şehir: Bodrum
  • Basıldığı Ülke: Türkiye
  • Eskişehir Osmangazi Üniversitesi Adresli: Hayır

Özet

In this study, effect of N-2 gas flow rates on structural, optical and morphological properties of InGaN thin films grown by Radio Frequency Magnetron Sputtering (RFMS) method on n-type silicon (111) substrate have been investigated. X-ray diffraction (XRD) measurements confirmed that InGaN thin films have been successfully deposited and exhibited diffraction peak belong to (002) plane for each film. The surface roughness of InGaN thin films has been determined by using Atomic Force Microscopy (AFM). The energy band gap of the film was determined by using the optical absorption spectra around 2.49 and 2.47 eV for each film.