Investigation of the Surface Free Energy of the ITO Thin Films Deposited Under Different Working Pressure

Ozen S., Senay V., PAT S., KORKMAZ Ş.

9th International Physics Conference of the Balkan-Physical-Union (BPU), İstanbul, Turkey, 24 - 27 August 2015, vol.1722 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1722
  • Doi Number: 10.1063/1.4944296
  • City: İstanbul
  • Country: Turkey
  • Eskisehir Osmangazi University Affiliated: Yes


This study discusses the influence of working pressure on the surface energy of the ITO thin films produced by radio frequency magnetron sputtering method. Optical tensiometer (Attension Theta Lite) is used for evaluating wetting behavior of the water droplet on the film surface and Equation of State method was selected to determine surface free energy for this study. Equation of state method does not divide the surface tension into different components such as polar, dispersive, acid-base. It is calculated the surfaces' free energy measuring the contact angle with a single liquid. The surface free energy value was in the range of 15-31 mN/m. Also, the transmittances were determined in the wavelength range between 200 and 1000 nm using the UNICO 4802 UV-Vis double beam spectrophotometer. Transmittances of the produced ITO thin films are greater than % 70 in the visible range.