Investigation of Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Celss at Low Temperatures-Contributions of Charge Trapping | AVESİS

Eskisehir Osmangazi University Research Information System

Investigation of Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Celss at Low Temperatures-Contributions of Charge Trapping

Copy For Citation

Talukder A. H., Khan R. S., Nyugen K., Nadolny M., Noor N., DİRİSAĞLIK F., ...More

Material Research Society (MRS) Spring Meeting 2019, Phoenix, United States Of America, 22 - 26 April 2019

Publication Type: Conference Paper / Summary Text
City: Phoenix
Country: United States Of America
Eskisehir Osmangazi University Affiliated: Yes