Field dependent drift velocity results are presented for carrier transport in Cd1-xZnxTe material based on a Monte Carlo model. Scattering mechanisms considered in the simulations are ionized impurity, polar optical phonon, acoustic phonon, non-polar optical phonon, intervalley, dislocation and alloy scattering. The electron energy, steady-state drift velocity and band occupancy are calculated as a function of electric field for different alloy compositions. The dependence of the relevant transport properties on the parameters is discussed. Low-field drift mobilities are extracted from the velocity-field curves. The material could be useful and developed as transparent conductors for solar energy applications.